Photoluminescence properties of silicon quantum-well layers
نویسندگان
چکیده
منابع مشابه
Photoluminescence of silicon quantum dots in nanospheres.
Si quantum dots (SiQDs) based nanospheres (SiNSs) were prepared via a novel synthetic strategy. These SiNSs were demonstrated to possess unique dot spacing dependent photoluminescence (PL) up-conversion and surface dependent (N modified surface) down-converted PL. It was demonstrated that a small distance between SiQDs (<5 nm) is the necessary condition for the PL up-conversion of SiNSs, while ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1997
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.55.4563